IXFR58N20Q mosfets equivalent, hiperfet power mosfets.
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1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
250 2500 5
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Weight
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - .
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V
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V.
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